Semiconductor chip including low-k dielectric layer

ABSTRACT

A semiconductor chip includes a device layer on a substrate, the device layer including a plurality of semiconductor devices; a wiring structure and a lower inter-wiring dielectric layer each on the device layer, the lower inter-wiring dielectric layer surrounding the wiring structure and having a lower permittivity than silicon oxide; an upper inter-wiring dielectric layer arranged on the lower inter-wiring dielectric layer; an isolation recess arranged along an edge of the substrate, the isolation recess formed on side surfaces of the lower and upper inter-wiring dielectric layers and having a bottom surface at a level equal to or lower than that of a bottom surface of the lower inter-wiring dielectric layer; and a cover dielectric layer covering the side surfaces of the lower and upper inter-wiring dielectric layers and the bottom surface of the isolation recess.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2019-0101872, filed on Aug. 20, 2019, in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein in its entirety by reference.

BACKGROUND

The inventive concept relates to a semiconductor chip, and moreparticularly, to a semiconductor chip including a low-k dielectriclayer.

With rapid development of the electronics industry and user needs,electronic devices and equipment are becoming lighter and more compactthan ever. Accordingly, semiconductor chips/packages used in electronicdevices are getting to have higher degrees of integration than ever, andthus design rules for the components of semiconductor chips/packageshave been decreased. Therefore, a low-k dielectric layer has beenintroduced to reduce parasitic capacitance in a semiconductor chip, andmore particularly, between wirings.

SUMMARY

The inventive concept provides a semiconductor chip for securingmechanical reliability during singulation of the semiconductor chip.

According to an aspect of the inventive concept, there is provided asemiconductor chip. The semiconductor chip includes a device layer on asubstrate, the device layer including a plurality of semiconductordevices; a wiring structure and a lower inter-wiring dielectric layereach on the device layer, the lower inter-wiring dielectric layersurrounding the wiring structure and having a lower permittivity thansilicon oxide; an upper inter-wiring dielectric layer on the lowerinter-wiring dielectric layer, the upper inter-wiring dielectric layerhaving a permittivity that is equal to or higher than a permittivity ofsilicon oxide; an isolation recess along an edge of the substrate, theisolation recess formed on a side surface of the lower inter-wiringdielectric layer and a side surface of the upper inter-wiring dielectriclayer and having a bottom surface at a level that is equal to or lowerthan a level of a bottom surface of the lower inter-wiring dielectriclayer; and a cover dielectric layer covering the side surfaces of thelower inter-wiring dielectric layer and the upper inter-wiringdielectric layer and the bottom surface of the isolation recess.

According to another aspect of the inventive concept, there is provideda semiconductor chip including a device layer on a substrate, the devicelayer including a plurality of semiconductor devices; a wiring structureand a lower inter-wiring dielectric layer each on the device layer, thelower inter-wiring dielectric layer surrounding the wiring structure; anupper inter-wiring dielectric layer on the lower inter-wiring dielectriclayer; an isolation recess arranged along the entirety of an edge of thesubstrate and extending from a top surface of the upper inter-wiringdielectric layer at least to the same level as a bottom surface of thelower inter-wiring dielectric layer; and an upper cover dielectric layerfilling the isolation recess, covering at least a portion of the topsurface of the upper inter-wiring dielectric layer, and having a stepportion along at least a portion of the edge of the substrate.

According to a further aspect of the inventive concept, there isprovided a semiconductor chip including a device layer on a substratethat has four sides which form a rectangular shape in a plan view, thedevice layer including a plurality of semiconductor devices; a wiringstructure and a lower inter-wiring dielectric layer each on the devicelayer, the lower inter-wiring dielectric layer surrounding the wiringstructure; an upper inter-wiring dielectric layer on the lowerinter-wiring dielectric layer; an isolation recess arranged along theentirety of an edge of the substrate and extending from a top surface ofthe upper inter-wiring dielectric layer at least to the same level as abottom surface of the lower inter-wiring dielectric layer; a pad patternon the upper inter-wiring dielectric layer and a pad via passing throughthe upper inter-wiring dielectric layer, the pad via electricallyconnecting the pad pattern to the wiring structure; and an upper coverdielectric layer filling the isolation recess, covering at least aportion of the top surface of the upper inter-wiring dielectric layer,and having a step portion along at least one of the four sides of thesubstrate at a level that is higher than a top surface of the lowerinter-wiring dielectric layer and lower than the top surface of theupper inter-wiring dielectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the inventive concept will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings in which:

FIGS. 1 through 7 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments;

FIGS. 8A and 8B are respectively a cross-sectional view and a plan viewthat show main elements of a semiconductor chip, according toembodiments;

FIG. 9 is a cross-sectional view of a stage in a method of manufacturinga semiconductor chip, according to embodiments;

FIG. 10 is a cross-sectional view showing main elements of asemiconductor chip, according to embodiments;

FIGS. 11 through 15 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments;

FIG. 16 is a cross-sectional view showing main elements of asemiconductor chip, according to embodiments;

FIG. 17 is a cross-sectional view showing main elements of asemiconductor chip, according to embodiments;

FIGS. 18A and 18B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments;

FIGS. 19A and 19B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments;

FIG. 20 is a cross-sectional view of a stage in a method ofmanufacturing a semiconductor chip, according to embodiments;

FIG. 21 is a cross-sectional view showing main elements of asemiconductor chip, according to embodiments;

FIGS. 22 through 24 are cross-sectional views showing main elements ofsemiconductor chips, according to embodiments;

FIGS. 25 and 26 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments;

FIG. 27 is a cross-sectional view showing main elements of asemiconductor chip, according to embodiments;

FIGS. 28 through 30 are cross-sectional views showing main elements ofsemiconductor chips, according to embodiments;

FIGS. 31A and 31B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments;

FIGS. 32 through 34 are cross-sectional views showing main elements ofsemiconductor chips, according to embodiments;

FIGS. 35 and 36 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments;

FIGS. 37A and 37B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments;

FIG. 38 is a cross-sectional view of a stage in a method ofmanufacturing a semiconductor chip, according to embodiments; and

FIGS. 39A and 39B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

FIGS. 1 through 7 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments. FIGS. 8Aand 8B are respectively a cross-sectional view and a plan view that showmain elements of a semiconductor chip, according to embodiments.

Referring to FIG. 1 , a device layer 130 including a plurality ofsemiconductor devices 120 is formed on a substrate 110. The substrate110 may include a device region DR, in which the semiconductor devices120 are arranged, and a scribe lane region SR. The scribe lane region SRmay surround each of a plurality of device regions DR in a plan view.Although only two device regions DR and one scribe lane region SRbetween two device regions DR are illustrated in FIG. 1 , the substrate110 may include a plurality of device regions DR in a matrix and ascribe lane region SR arranged between adjacent device regions DR tosurround each of the device regions DR in a plan view. The scribe regionSR may be a region that may be removed from a wafer in which the deviceregions DR formed while maintaining operability of devices (e.g.,integrated circuit devices) formed within the device regions DR. Thescribe region SR between the device regions DR may comprise areas of thewafer in which no circuits (e.g., no transistors) are formed and/or nocircuits (e.g., no transistors) are formed that are part of theintegrated circuits of the integrated circuit devices within the deviceregions DR.

The scribe lane region SR may include a cutting region BR and aremaining scribe region RR. In the scribe lane region SR, the remainingscribe region RR may be a portion contacting a device region DR and thecutting region BR may be a portion separated from the device region DRwith the remaining scribe region RR between the cutting region BR andthe device region DR

To obtain a semiconductor chip 1 in FIGS. 8A and 8B by separating thedevice region DR including a plurality of semiconductor devices 120, adicing process may be performed such that the substrate 110 is cut alongthe scribe lane region SR, in which the semiconductor devices 120 arenot arranged. During the dicing process, the cutting region BR isremoved and the remaining scribe region RR may remain around the deviceregion DR. Accordingly, the device region DR and the remaining scriberegion RR, which remains around the device region DR in contact with thedevice region DR, may form a singulated semiconductor chip and may thusbe together referred to as a chip region CR.

The cutting region BR and the remaining scribe region RR, which areincluded in the scribe lane region SR, are defined as a result of adicing process and may thus not be clearly defined before the dicingprocess is performed. However, since the scribe lane region SR is formedto have a greater area than the cutting region BR to prevent the deviceregion DR from being damaged during the dicing process, thesemiconductor chip 1 that has singulated includes the device region DRand the remaining scribe region RR, i.e., a portion of the scribe laneregion SR contacting the device region DR along the edge of the deviceregion DR.

The substrate 110 may include, for example, silicon (Si). The substrate110 may include a semiconductor element, e.g., germanium (Ge), or acompound semiconductor such as silicon carbide (SiC), gallium arsenide(GaAs), indium arsenide (InAs), or indium phosphide (InP). The substrate110 may have a silicon-on-insulator (SOI) structure. For example, thesubstrate 110 may include a buried oxide (BOX) layer. The substrate 110may include a conductive region, e.g., an impurity-doped well or animpurity-doped structure. The substrate 110 may have various isolationstructures including a shallow trench isolation (STI) structure. Thesubstrate 110 may have an active side and an inactive side opposite tothe active side. The device layer 130 including the semiconductordevices 120 may be formed in the active side of the substrate 110. Forexample, the active side may be a main surface of the substrate 110 onwhich circuits and the semiconductor devices 120 are formed, and theinactive side may be a bottom surface of the substrate 110 which isopposite to the main surface of the substrate 110.

At least some of the semiconductor devices 120 may be transistors. Forexample, at least some of the semiconductor devices 120 may be bipolarjunction transistors (BJTs) or field effect transistors (FETs). Forexample, at least some of the semiconductor devices 120 may be planartransistors or FinFETs. When at least some of the semiconductor devices120 are FinFETs, a plurality of fin-type active regions may protrudefrom the substrate 110 and extend in a horizontal direction in parallelwith each other.

The semiconductor devices 120 may form a logic cell. The logic cell mayinclude a plurality of circuit elements, such as a transistor and aregister, in various manners. The logic cell may constitute, forexample, an AND gate, a NAND gate, an OR gate, a NOR gate, an exclusiveOR (XOR) gate, an exclusive NOR (XNOR) gate, an inverter (INV), an adder(ADD), a buffer (BUF), a delay (DLY), a filter (FIL), a multiplexer(MXT/MXIT), an OR/AND/inverter (OAI) gate, an AND/OR (AO) gate, anAND/OR/inverter (AOI) gate, a D flip-flop, a reset flip-flop, amaster-slaver flip-flop, or a latch. The logic cell may constitute astandard cell, such as a counter or a buffer, which performs a desiredlogical function.

The semiconductor devices 120 may include, for example, various kinds ofindividual devices for constituting a central processing unit (CPU), agraphics processing unit (GPU), an application processor (AP), a dynamicrandom access memory (DRAM) device, a static RAM (SRAM) device, a flashmemory device, an electrically erasable and programmable read-onlymemory (EEPROM) device, a phase-change RAM (PRAM) device, a magnetic RAM(MRAM) device, or a resistive RAM (RRAM) device.

The device layer 130 may include the semiconductor devices 120, aconductive line and a conductive plug that electrically connect thesemiconductor devices 120, and an interlayer dielectric layer betweenconductive plugs and may include various kinds and shapes of conductivematerials, semiconductor materials, and insulating materials. In someembodiments, the interlayer dielectric layer disposed between theconductive line and the conductive plugs may include oxide.

An auxiliary structure 190 may be arranged in the scribe lane region SR.The auxiliary structure 190 is irrelevant to the operation of thesemiconductor devices 120 and may include any structure that isauxiliary used during the manufacture of the semiconductor devices 120or is used to evaluate the electrical characteristics and/or physicalcharacteristics of the semiconductor devices 120. The auxiliarystructure 190 may include, for example, a test element group (TEG) or analignment key. Although it is illustrated that the auxiliary structure190 is arranged in the device layer 130, it is just an example and theauxiliary structure 190 may be formed in the substrate 110, the devicelayer 130, or a portion at a higher level than the device layer 130 in avertical direction from the substrate 110 illustrated in FIGS. 2 through7 , in the scribe lane region SR.

In the specification, the term “level” refers to a height from a mainsurface, e.g., a top surface, of the substrate 110 in the verticaldirection. For example, “being at the same level” or “being at a certainlevel” refers to “having the same height from the main surface of thesubstrate 110 in the vertical direction” or “being at a certain positionhaving a certain distance from the main surface of the substrate 110 inthe vertical direction”, and “being at a low/high level” refers to“being at a low/high position with respect to the main surface of thesubstrate 110 in the vertical direction”. For example, the height/levelmay be a distance from the top surface of the substrate 110 in aperpendicular direction with respect to the top surface of the substrate110.

Referring to FIG. 2 , a wiring structure MS and a first inter-wiringdielectric layer 210 surrounding the wiring structure MS are formed onthe substrate 110 having the device layer 130. The first inter-wiringdielectric layer 210 may include an insulating material that has a lowerpermittivity than silicon oxide. In some embodiments, the firstinter-wiring dielectric layer 210 may include an ultra low-k (ULK) filmthat has an ultra low dielectric constant of about 2.2 to about 2.4. TheULK film may include an SiOC film or an SiCOH film. The firstinter-wiring dielectric layer 210 may be referred to as a low-kdielectric layer. In some embodiments, the level of a top surface of thefirst inter-wiring dielectric layer 210 may be substantially constant.For example, the top surface of the first inter-wiring dielectric layer210 may be flat.

Terms such as “same,” “equal,” “planar,” or “coplanar,” as used hereinwhen referring to orientation, layout, location, shapes, sizes, amounts,or other measures do not necessarily mean an exactly identicalorientation, layout, location, shape, size, amount, or other measure,but are intended to encompass nearly identical orientation, layout,location, shapes, sizes, amounts, or other measures within acceptablevariations that may occur, for example, due to manufacturing processes.The term “substantially” may be used herein to emphasize this meaning,unless the context or other statements indicate otherwise. For example,items described as “substantially the same,” “substantially equal,” or“substantially planar,” may be exactly the same, equal, or planar, ormay be the same, equal, or planar within acceptable variations that mayoccur, for example, due to manufacturing processes.

The wiring structure MS may include a plurality of wiring layers ML anda plurality of via plugs MV electrically/directly connected to thewiring layers ML. The wiring structure MS may include, for example, ametal such as aluminum, copper, or tungsten. In some embodiments, thewiring structure MS may include a wiring barrier layer and a wiringmetal layer. The wiring barrier layer may include a nitride or an oxideof a metal, such as Ti, Ta, Ru, Mn, Co, or W, or an alloy such as cobalttungsten phosphide (CoWP), cobalt tungsten boron (CoWB), or cobalttungsten boron phosphide (CoWBP). The wiring metal layer may include atleast one metal selected from W, Al, Ti, Ta, Ru, Mn, and Cu.

It will be understood that when an element is referred to as being“connected” or “coupled” to or “on” another element, it can be directlyconnected or coupled to or on the other element or intervening elementsmay be present. In contrast, when an element is referred to as being“directly connected” or “directly coupled” to another element, or as“contacting” or “in contact with” another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.). The term “contact,” as used herein, refers to a directconnection (i.e., touching) unless the context indicates otherwise.

The wiring layers ML may have a multilayer structure that has the wiringlayers ML at different levels. The first inter-wiring dielectric layer210 may have a multilayer structure, in which a plurality of low-kdielectric layers are stacked, in correspondence to the multilayerstructure of the wiring layers ML. In some embodiments, the firstinter-wiring dielectric layer 210 may have a multilayer structure, inwhich an insulating material having a lower permittivity than siliconoxide and another insulating material having a permittivity that isequal to or greater than that of silicon oxide are stacked. For example,the multilayer structure of the first inter-wiring dielectric layer 210may include at least one oxide or nitride layer. For example, the firstinter-wiring dielectric layer 210 may include an etch stop layer, whichincludes nitride used in a process of forming the wiring layers ML, buta proportion of the etch stop layer including nitride in the firstinter-wiring dielectric layer 210 may be relatively very low. Forexample, the total thickness of the etch stop layer may be less than onetenth of the total thickness of the first inter-wiring dielectric layer210. In certain embodiments, the layers having a lower permittivity andthe layers having a higher permittivity than silicon oxide may bealternately stacked in the first inter-wiring dielectric layer 210.

In some embodiments, a bottom surface of a lower wiring layer ML-L thatis at the lowest level among the wiring layers ML may be at the samelevel as a bottom surface of the first inter-wiring dielectric layer210.

Although it is illustrated in FIG. 2 that a top surface of a wiringlayer ML that is at the highest level among the wiring layers ML is atthe same level as the top surface of the first inter-wiring dielectriclayer 210, embodiments are not limited thereto. In some embodiments, abottom surface of the wiring layer ML that is at the highest level amongthe wiring layers ML may be at the same level as the top surface of thefirst inter-wiring dielectric layer 210.

A lower via plug MV-L that is at the lowest level among the via plugs MVmay extend from the bottom surface of the lower wiring layer ML-L towardthe device layer 130. The wiring structure MS may be electricallyconnected to the semiconductor devices 120. The via plugs MV may extendfrom the bottom surface of each of the wiring layers ML, which are atdifferent levels in a multilayer structure of the wiring layers ML,toward the substrate 110.

Some of the via plugs MV may electrically/directly connect the wiringlayers ML at different levels to each other, and others of the via plugsMV may electrically connect some of the wiring layers ML to thesemiconductor devices 120. For example, the lower via plug MV-L mayelectrically connect the lower wiring layer ML-L to the semiconductordevices 120.

A second inter-wiring dielectric layer 220 and a sub pad via SPV areformed on the wiring structure MS and the first inter-wiring dielectriclayer 210. The sub pad via SPV passes through the second inter-wiringdielectric layer 220 and is electrically connected to the wiringstructure MS. A sub pad SPD is formed on the second inter-wiringdielectric layer 220 to be electrically connected to the sub pad viaSPV.

In some embodiments, the sub pad via SPV and the sub pad SPD may includea barrier layer and a metal layer. The barrier layer may include anitride or an oxide of a metal, such as Ti, Ta, Ru, Mn, Co, or W, or analloy such as CoWP, CoWB, or CoWBP. The metal layer may include at leastone metal selected from W, Al, Ti, Ta, Ru, Mn, and Cu.

The second inter-wiring dielectric layer 220 may include an oxide layer,a carbide layer, a polymer, or a combination thereof. For example, thesecond inter-wiring dielectric layer 220 may include oxide. In someembodiments, the second inter-wiring dielectric layer 220 may includetetraethyl orthosilicate (TEOS). In some embodiments, the level of a topsurface of the second inter-wiring dielectric layer 220 may besubstantially constant. For example, the top surface of the secondinter-wiring dielectric layer 220 may be flat.

A third inter-wiring dielectric layer 230, a protective dielectric layer240, and a fourth inter-wiring dielectric layer 250 are sequentiallyformed on the sub pad SPD and the second inter-wiring dielectric layer220. The third inter-wiring dielectric layer 230, the protectivedielectric layer 240, and the fourth inter-wiring dielectric layer 250may include an oxide layer, a carbide layer, a polymer, or a combinationthereof.

For example, the third inter-wiring dielectric layer 230 may includeoxide. In some embodiments, the third inter-wiring dielectric layer 230may include high-density plasma (HDP) oxide. For example, the thirdinter-wiring dielectric layer 230 may include an oxide layer (e.g., asilicon dioxide layer), and the oxide layer may be formed by ahigh-density plasma deposition process. In some embodiments, the levelof a top surface of the third inter-wiring dielectric layer 230 maychange with a step according to the level of the top surfaces of the subpad SPD and the second inter-wiring dielectric layer 220. For example,the sub pad SPD may protrude from the top surface of the secondinter-wiring dielectric layer 220, and the third inter-wiring dielectriclayer 230 may uneven top surface corresponding to top surfaces of thesub pad SPD and the second inter-wiring dielectric layer 220.

For example, the protective dielectric layer 240 may include nitride.The protective dielectric layer 240 may conformally cover the thirdinter-wiring dielectric layer 230. In some embodiments, the protectivedielectric layer 240 may change with a step according to the level ofthe top surface of the third inter-wiring dielectric layer 230.

For example, the fourth inter-wiring dielectric layer 250 may includeoxide. In some embodiments, the fourth inter-wiring dielectric layer 250may include TEOS. In some embodiments, the level of a top surface of thefourth inter-wiring dielectric layer 250 may be substantially constant.For example, the top surface of the fourth inter-wiring dielectric layer250 may be flat.

A pad via PV, which passes through the third inter-wiring dielectriclayer 230, the protective dielectric layer 240, and the fourthinter-wiring dielectric layer 250, and a pad pattern PD, which iselectrically connected to the pad via PV and arranged on the fourthinter-wiring dielectric layer 250, are formed. In some embodiments, thepad via PV and the pad pattern PD may include a barrier layer and ametal layer. The barrier layer may include a nitride or an oxide of ametal, such as Ti, Ta, Ru, Mn, Co, or W, or an alloy such as CoWP, CoWB,or CoWBP. The metal layer may include at least one metal selected fromW, Al, Ti, Ta, Ru, Mn, and Cu. The pad via PV may electrically connectthe sub pad SPD to the pad pattern PD. The pad pattern PD may include aredistribution pattern and a chip pad connected to the redistributionpattern. For example, the pad pattern PD may be electrically connectedto the redistribution pattern and the chip pad. For example, the padpattern PD may be directly/integrally connected to the redistributionpattern (e.g., the pad pattern PD and redistribution pattern may be apattern of the same metal layer).

The second inter-wiring dielectric layer 220, the third inter-wiringdielectric layer 230, the protective dielectric layer 240, and thefourth inter-wiring dielectric layer 250 may include a material having agreater permittivity than the first inter-wiring dielectric layer 210.For example, each of the second inter-wiring dielectric layer 220, thethird inter-wiring dielectric layer 230, the protective dielectric layer240, and the fourth inter-wiring dielectric layer 250 may include aninsulating material having a permittivity that is equal to or higherthan a permittivity of silicon oxide.

Referring to FIG. 3 , a hardmask layer 270 covering the fourthinter-wiring dielectric layer 250 and the pad pattern PD is formed. Insome embodiments, the hardmask layer 270 may include a carbon-basedlayer. For example, the carbon-based layer may include an amorphouscarbon layer (ACL) or a carbon-based spin-on hardmask (C-SOH) layer.FIG. 3 illustrates a cross section of a wafer in which completedsemiconductor devices are integrally formed in each of the deviceregions DR. Although only two device regions DR are shown, it will beappreciated that device regions DR may be formed in rows and columnswithin the wafer (in a two dimensional array with respect to top downview of the wafer). The device regions DR may be separated from eachother by scribe lane regions SR (e.g., forming a grid in which the cellsof the grid correspond to the device regions DR).

Referring to FIG. 4 , the hardmask layer 270 is partially removed toform an opening OP that exposes the fourth inter-wiring dielectric layer250 in the scribe lane region SR. In some embodiments, a portion of thefourth inter-wiring dielectric layer 250 in the scribe lane region SRand a portion of the fourth inter-wiring dielectric layer 250 in aportion of the device region DR adjacent to the scribe lane region SRmay be exposed through the opening OP. For example, the portion of thedevice region DR, in which the portion of the fourth inter-wiringdielectric layer 250 is exposed through the opening OP, may have a widthof about 5 μm or less from the scribe lane region SR.

Thereafter, the fourth inter-wiring dielectric layer 250, the protectivedielectric layer 240, the third inter-wiring dielectric layer 230, andthe second inter-wiring dielectric layer 220 are partially removed usingthe hardmask layer 270 as an etch mask so that an isolation recess SRSexposing the first inter-wiring dielectric layer 210 is formed.

For example, the fourth inter-wiring dielectric layer 250, theprotective dielectric layer 240, the third inter-wiring dielectric layer230, and the second inter-wiring dielectric layer 220 may be partiallyremoved using an etching/ashing process.

Referring to FIG. 5 , a portion of the first inter-wiring dielectriclayer 210, which is exposed in a bottom surface of the isolation recessSRS, is removed to expose the device layer 130. The portion of the firstinter-wiring dielectric layer 210 is removed such that the isolationrecess SRS may extend into/inside the first inter-wiring dielectriclayer 210 and expose the device layer 130 in the bottom surface thereof.The bottom surface of the isolation recess SRS may be at the same levelas the top surface of the device layer 130.

The portion of the first inter-wiring dielectric layer 210 may beremoved using a dry etching process such as sputtering or reactive ionetching (RIE).

In some embodiments, a side surface of each of the fourth inter-wiringdielectric layer 250, the protective dielectric layer 240, the thirdinter-wiring dielectric layer 230, and the second inter-wiringdielectric layer 220, and the first inter-wiring dielectric layer 210,which are exposed in the isolation recess SRS, may be substantiallysmooth. For example, the isolation recess SRS may be formed on sidesurfaces of the first, second, third and fourth inter-wiring dielectriclayers 210, 220, 230 and 250, on the side surface of the protectivedielectric layer 240, and on the top surface of the device layer 130.For example, a cross-sectional view of side walls of the isolationrecess SRS may be linear as shown in FIG. 5 .

After the portion of the first inter-wiring dielectric layer 210 isremoved, the hardmask layer 270 (in FIG. 4 ) that has remained may beremoved.

Referring to FIG. 6 , an upper cover dielectric layer 290 is formed tofill at least a portion of the isolation recess SRS and to cover thefourth inter-wiring dielectric layer 250 and the pad pattern PD. Theupper cover dielectric layer 290 may include a single layer includingone kind of an insulating layer, a double layer including two kinds ofinsulating layers, or a multiple layer including a combination of atleast three kinds of insulating layers. For example, the upper coverdielectric layer 290 may include oxide. In some embodiments, the uppercover dielectric layer 290 may include TEOS. For example, the uppercover dielectric layer 290 may include oxide, nitride, or a combinationthereof. In some embodiments, the upper cover dielectric layer 290 mayinclude a HDP oxide layer, a TEOS layer, a silicon nitride layer, or acombination thereof. In some embodiments, the upper cover dielectriclayer 290 may have a multiple layer in which a layer formed of HDP, alayer formed of TEOS, and a layer formed of silicon nitride aresequentially stacked. In some embodiments, the upper cover dielectriclayer 290 may have a multiple layer in which a layer formed of TEOS, alayer formed of HDP, and a layer formed of silicon nitride aresequentially stacked. In some embodiments, the upper cover dielectriclayer 290 may have a multiple layer in which a layer formed of HDP, alayer formed of silicon nitride, and a layer formed of TEOS aresequentially stacked. The upper cover dielectric layer 290 may include amaterial having a greater permittivity than the first inter-wiringdielectric layer 210. The upper cover dielectric layer 290 may coverboth an inner surface and the bottom surface of the isolation recessSRS. In some embodiments, the lowest level of a top surface of the uppercover dielectric layer 290 may be higher than the level of the topsurface of the first inter-wiring dielectric layer 210. For example, theupper cover dielectric layer 290 may fully fill the space of a portionof the isolation recess SRS formed in the first inter-wiring dielectriclayer 210.

The upper cover dielectric layer 290 may include a recess portion 290R,in which the top surface of the upper cover dielectric layer 290 dropsin correspondence to the isolation recess SRS. For example, the recessportion 290R may correspond to the isolation recess SRS.

Referring to FIG. 7 , an upper portion of the upper cover dielectriclayer 290 is removed such that the level of the top surface of the uppercover dielectric layer 290 is substantially constant in the deviceregion DR. For example, the top surface of the upper cover dielectriclayer 290 may be flat in the device region DR. In some embodiments, thelevel of the top surface of the upper cover dielectric layer 290 may belower in a portion of the remaining scribe region RR than in the deviceregion DR. For example, when the upper portion of the upper coverdielectric layer 290 is removed, the upper cover dielectric layer 290may include the recess portion 290R corresponding to the isolationrecess SRS. For example, the upper portion of the upper cover dielectriclayer 290 may be removed using a chemical mechanical polishing (CMP)process.

In some embodiments, a bottom surface of the recess portion 290R may beat a lower level than the top surface of the fourth inter-wiringdielectric layer 250.

Referring to FIGS. 7, 8A, and 8B, a portion of the upper coverdielectric layer 290 on the pad pattern PD is removed such that a chippad portion CPD of the pad pattern PD may be exposed. At least a portionof the pad pattern PD covered with the upper cover dielectric layer 290may be a redistribution pattern. For example, the chip pad portion CPDmay be directly connected to or integrally formed with theredistribution pattern.

Thereafter, a dicing process is performed to cut the substrate 110 alongthe scribe lane region SR so that the semiconductor chip 1 issingulated. For example, the dicing process for obtaining thesemiconductor chip 1 may be performed by sawing/cutting using a blade. Awidth of the cutting region BR in FIGS. 1 through 7 may be substantiallythe same as the kerf width of a blade used in the dicing process forobtaining the semiconductor chip 1. The kerf width of a blade may beless than the width of the scribe lane region SR (in FIGS. 1 through 7 )defined between two adjacent device regions DR.

The semiconductor chip 1 includes the device layer 130 including thesemiconductor devices 120 on the substrate 110. The substrate 110 mayinclude the device region DR, in which the semiconductor devices 120 arearranged, and the remaining scribe region RR surrounding the deviceregion DR along the edge of the semiconductor chip 1. The remainingscribe region RR may be the scribe lane region SR in the FIGS. 1 through7 , except for the cutting region BR removed by sawing/cutting using ablade.

The wiring structure MS and the first inter-wiring dielectric layer 210surrounding the wiring structure MS are arranged on the substrate 110having the device layer 130. The first inter-wiring dielectric layer 210may include an insulating material having a lower permittivity thansilicon oxide. The first inter-wiring dielectric layer 210 may bereferred to as a low-k dielectric layer. In some embodiments, the levelof the top surface of the first inter-wiring dielectric layer 210 may besubstantially constant.

The wiring structure MS may include the wiring layers ML and the viaplugs MV electrically connected to the wiring layers ML. The wiringstructure MS may be electrically connected to the semiconductor devices120. The wiring layers ML may have a multilayer structure that has thewiring layers ML at different levels. The via plugs MV may extend fromthe bottom surface of each of the wiring layers ML, which are atdifferent levels in a multilayer structure of the wiring layers ML,toward the substrate 110. Some of the via plugs MV mayelectrically/directly connect the wiring layers ML at different levelsto each other, and others of the via plugs MV may electrically/directlyconnect some of the wiring layers ML to the semiconductor devices 120.

In some embodiments, the bottom surface of the lower wiring layer ML-Lthat is at the lowest level among the wiring layers ML may be at thesame level as the bottom surface of the first inter-wiring dielectriclayer 210. The lower via plug MV-L that is at the lowest level among thevia plugs MV may extend from the bottom surface of the lower wiringlayer ML-L toward the device layer 130. For example, the lower via plugMV-L may electrically connect the lower wiring layer ML-L to thesemiconductor devices 120.

The second inter-wiring dielectric layer 220 and the sub pad via SPV arearranged on the wiring structure MS and the first inter-wiringdielectric layer 210. The sub pad via SPV passes through the secondinter-wiring dielectric layer 220 and is electrically connected to thewiring structure MS. The sub pad SPD is arranged on the secondinter-wiring dielectric layer 220 to be electrically connected to thesub pad via SPV. In some embodiments, the level of the top surface ofthe second inter-wiring dielectric layer 220 may be substantiallyconstant. In some embodiments, the sub pad via SPV and the sub pad SPDmay be omitted.

The third inter-wiring dielectric layer 230, the protective dielectriclayer 240, and the fourth inter-wiring dielectric layer 250 aresequentially stacked on the sub pad SPD and the second inter-wiringdielectric layer 220. In some embodiments, the level of the top surfaceof the third inter-wiring dielectric layer 230 may change with a stepaccording to the level of the top surfaces of the sub pad SPD and thesecond inter-wiring dielectric layer 220. The protective dielectriclayer 240 may conformally cover the third inter-wiring dielectric layer230. In some embodiments, the level of the top surface of the protectivedielectric layer 240 may change, e.g., including a step, according tothe level of the top surface of the third inter-wiring dielectric layer230. The protective dielectric layer 240 may function as a passivationlayer protecting the semiconductor chip 1. In some embodiments, thelevel of the top surface of the fourth inter-wiring dielectric layer 250may be substantially constant.

The pad pattern PD may be arranged on the fourth inter-wiring dielectriclayer 250, and the pad via PV may pass through the third inter-wiringdielectric layer 230, the protective dielectric layer 240, and thefourth inter-wiring dielectric layer 250 to electrically connect the subpad SPD to the pad pattern PD.

For convenience of description, the first inter-wiring dielectric layer210 may be referred to as a lower inter-wiring dielectric layer 210, andthe second inter-wiring dielectric layer 220, the third inter-wiringdielectric layer 230, the protective dielectric layer 240, and thefourth inter-wiring dielectric layer 250 may be collectively referred toas an upper inter-wiring dielectric layer. For example, thesemiconductor chip 1 may include the substrate 110, the device layer 130including the semiconductor devices 120 on the substrate 110, the wiringstructure MS on the device layer 130, the lower inter-wiring dielectriclayer 210 surrounding the wiring structure MS, the upper inter-wiringdielectric layer on the lower inter-wiring dielectric layer 210, the padpattern PD including a chip pad on the upper inter-wiring dielectriclayer, and the pad via PV electrically connecting the pad pattern PD tothe wiring structure MS.

The upper cover dielectric layer 290 may cover a portion of the padpattern PD and the fourth inter-wiring dielectric layer 250. A portionof the pad pattern PD that is not covered with the upper coverdielectric layer 290 may be the chip pad portion CPD, and the portion ofthe pad pattern PD that is covered with the upper cover dielectric layer290 may be at least partially a redistribution pattern. For example, thepad pattern PD may include the chip pad portion CPD and theredistribution pattern.

The upper cover dielectric layer 290 may cover the side surfaces of thefirst inter-wiring dielectric layer 210, the second inter-wiringdielectric layer 220, the third inter-wiring dielectric layer 230, theprotective dielectric layer 240, and the fourth inter-wiring dielectriclayer 250 in the isolation recess SRS. The upper cover dielectric layer290 may cover the top surface of the device layer 130 at the bottomsurface of the isolation recess SRS. For example, the upper coverdielectric layer 290 may cover a top surface of an interlayer dielectriclayer of the device layer 130.

The upper cover dielectric layer 290 may have a step portion ST in anedge of the semiconductor chip 1. For example, the step portion ST maybe a stepped down area of the upper cover dielectric layer 290 from thehighest flat surface of the upper cover dielectric layer 290. Forexample, the step portion ST may include a step formed in the uppercover dielectric layer 290. In certain embodiments, the step portion mayrefer to the step itself. In some embodiments, the step portion ST ofthe upper cover dielectric layer 290 may be formed in the remainingscribe region RR. In some embodiments, the step portion ST of the uppercover dielectric layer 290 may be formed across the remaining scriberegion RR and a portion of the device region DR adjacent to theremaining scribe region RR. For example, the remaining scribe region RRmay be an edge portion of the semiconductor chip 1. For example,semiconductor devices may not be disposed in the edge portion of thesemiconductor chip 1. For example, the portion of the device region DRwith which the step portion ST overlaps in a vertical direction mayoverlap a semiconductor device formed in the device region DR in thevertical direction.

The step portion ST may surround the device region DR along the edge ofthe semiconductor chip 1. For example, when the semiconductor chip 1 hasfour sides which form a rectangular shape in a plan view, the stepportion ST may be arranged to surround the device region DR along thefour sides of the semiconductor chip 1. In some embodiments, the stepportion ST may extend along the four sides of the semiconductor chip 1with a substantially uniform horizontal width. For example, the stepportion ST may extend along the four sides of the semiconductor chip 1with a horizontal width of about 5 μm or less. The isolation recess SRSmay be arranged along the edge of the semiconductor chip 1. For example,the isolation recess SRS may extend along four sides of thesemiconductor chip 1.

The edge or four sides of the semiconductor chip 1 may be referred to asthe edge or four sides of the substrate 110.

The step portion ST, e.g., the top surface of the step portion ST, maybe at a lower level than the top surface of the fourth inter-wiringdielectric layer 250. The step portion ST, e.g., the top surface of thestep portion ST, may be at a higher level than the top surface of thefirst inter-wiring dielectric layer 210. The side surface of the uppercover dielectric layer 290 may extend below the step portion STsubstantially in the vertical direction. For example, the side surfaceof the upper cover dielectric layer 290 may extend substantially in thevertical direction with respect to the main surface of the substrate 110in a portion around the first inter-wiring dielectric layer 210, i.e.,between the levels of the top and bottom surfaces of the firstinter-wiring dielectric layer 210. In some embodiments, the side surfaceof the upper cover dielectric layer 290 may extend above the stepportion ST at an acute angle with respect to the main surface of thesubstrate 110.

According to embodiments, the first inter-wiring dielectric layer 210,i.e., a low-k dielectric layer, is not chipped away by a blade during adicing process for singulation of the semiconductor chip 1. For example,during the dicing process for obtaining the singulated semiconductorchip 1, cutting process using a blade may be performed through the uppercover dielectric layer 290, the device layer 130, and the substrate 110.Therefore, the blade may pass through the upper cover dielectric layer290, the device layer 130 and the substrate 110, and may not touch thefirst inter-wiring electric layer 210 disposed in the device region DRof the semiconductor chip 1. Accordingly, chipping of a low-k dielectriclayer that may occur when the low-k dielectric layer is cut using ablade may be prevented. For example, chipping defect of the low-kdielectric layer which occurs when the blade touches/goes through thelow-k dielectric layer during the cutting process may be improved by theembodiments described above. Therefore, the side surface of thesemiconductor chip 1 may be substantially smooth, and accordingly, whenan adhesive film like a non-conductive film (NCF) is attached to thebottom surface of the substrate 110 of the semiconductor chip 1 and adicing process is performed to singulate the semiconductor chip 1 orwhen an adhesive film like an NCF is attached to the top or bottomsurface of the semiconductor chip 1 to stack a plurality ofsemiconductor chips 1, the adhesive film like an NCF may not be torn offat the edge of the semiconductor chip 1, which may be caused by chippingof a low-k dielectric layer and/or by chipped low-k dielectric layer.

FIG. 9 is a cross-sectional view of a stage in a method of manufacturinga semiconductor chip, according to embodiments. FIG. 10 is across-sectional view showing main elements of a semiconductor chip,according to embodiments. FIG. 9 is the cross-sectional view of thestage following the stage of FIG. 4 . Redundant descriptions similar toor the same as the ones already given with reference to FIGS. 1 through8B may be omitted. In FIGS. 1 through 10 , like reference numeralsdenote like elements.

Referring to FIG. 9 , the device layer 130 may be partially removed in aprocess of partially removing the first inter-wiring dielectric layer210 to expose the device layer 130 such that an isolation recess SRSamay pass through the first inter-wiring dielectric layer 210 and extendinto the device layer 130. A bottom surface of the isolation recess SRSamay be at a lower level than a top end of the device layer 130.

Referring to FIG. 10 , a semiconductor chip 1 a is formed by performingthe same processes as the ones described with reference to FIGS. 6through 8B.

The semiconductor chip 1 a includes the device layer 130 including thesemiconductor devices 120 on the substrate 110. The substrate 110 mayinclude the device region DR, in which the semiconductor devices 120 arearranged, and the remaining scribe region RR surrounding the deviceregion DR along the edge of the semiconductor chip 1 a.

The upper cover dielectric layer 290 may cover the side surfaces of thefirst inter-wiring dielectric layer 210, the second inter-wiringdielectric layer 220, the third inter-wiring dielectric layer 230, theprotective dielectric layer 240, and the fourth inter-wiring dielectriclayer 250 in the isolation recess SRSa and cover a side surface of anupper portion of the device layer 130. The upper cover dielectric layer290 may extend into the device layer 130 such that the bottom surface ofthe upper cover dielectric layer 290 is at a lower level than the topend/surface of the device layer 130 in the isolation recess SRSa. Theupper cover dielectric layer 290 may have a step portion ST in an edgeof the semiconductor chip 1 a.

FIGS. 11 through 15 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments. FIG. 16 isa cross-sectional view showing main elements of a semiconductor chip,according to embodiments. FIG. 11 is the cross-sectional view of a stagefollowing the stage of FIG. 1 . Redundant descriptions similar to or thesame as the ones already given with reference to FIGS. 1 through 8B maybe omitted. In FIGS. 1 through 16 , like reference numerals denote likeelements.

Referring to FIG. 11 , a through electrode 150 is formed to pass throughthe device layer 130 and extend into the substrate 110. Although thethrough electrode 150 extends from the top to the bottom of thesubstrate 110 passing through the substrate 110 in FIG. 11 , this isjust an example. The through electrode 150 may be formed to extend intothe substrate 110 and back-grinding or back-lapping may be performed topartially remove a lower portion of the substrate 110 in a subsequentprocess, such that the through electrode 150 is exposed at the bottom ofthe substrate 110.

The through electrode 150 may include a conductive plug and a conductivebarrier layer covering the surface of the conductive plug. For example,the conductive barrier layer may be disposed on the side surface of theconductive plug. For example, the conductive plug may include Cu or W.In some embodiments, the conductive plug may include Cu, CuSn, CuMg,CuNi, CuZn, CuPd, CuAu, CuRe, CuW, W, or an alloy of W but is notlimited thereto. In some embodiments, the conductive barrier layer mayinclude at least one material selected from Ti, TiN, Ta, TaN, Ru, Co,Mn, WN, Ni, and NiB. In some embodiments, a via dielectric layer may bearranged between the through electrode 150 and the device layer 130 andbetween the through electrode 150 and the substrate 110. For example,the via dielectric layer may include an oxide layer, a nitride layer, acarbide layer, a polymer, or a combination thereof.

In some embodiments, the conductive barrier layer and the conductiveplug may be formed using physical vapor deposition (PVD) or chemicalvapor deposition (CVD), but embodiments are not limited thereto. In someembodiments, the via dielectric layer may include a high-aspect-ratioprocess (HARP) oxide film formed using anozone/tetra-ethyl-ortho-silicate (O₃/TEOS)-based sub-atmospheric CVDprocess.

Before or after the through electrode 150 is formed, the lower via plugMV-L may be formed to extend from the top surface of the device layer130 into the device layer 130.

Referring to FIG. 12 , a capping dielectric film 160 is formed to coverthe device layer 130, the lower via plug MV-L, and the through electrode150. The capping dielectric film 160 may include, for example, nitride.

Referring to FIG. 13 , the capping dielectric film 160 is partiallyremoved to expose the lower via plug MV-L and at least portion of a topsurface of the through electrode 150, and then the lower wiring layerML-L is formed to be connected to the lower via plug MV-L and thethrough electrode 150. Although the capping dielectric film 160 is notbetween the lower wiring layer ML-L and the device layer 130 in FIG. 13, embodiments are not limited thereto. For example, the cappingdielectric film 160 may be between the lower wiring layer ML-L and thedevice layer 130 in which the lower via plug MV-L and the throughelectrode 150 are not arranged.

Referring to FIG. 14 , a buried dielectric layer 170 is formed to coverthe side surface of the lower wiring layer ML-L. For example, the burieddielectric layer 170 may include oxide. In some embodiments, the burieddielectric layer 170 may include TEOS. In some embodiments, the level ofa top surface of the buried dielectric layer 170 may be substantiallyconstant. For example, the top surfaces of the buried dielectric layer170 and the lower wiring layer ML-L may be coplanar.

The capping dielectric film 160 and the buried dielectric layer 170 mayinclude an insulating material having a permittivity that is equal to orhigher than that of silicon oxide.

Referring to FIG. 15 , the wiring structure MS and a first inter-wiringdielectric layer 210 a surrounding the wiring structure MS are formed onthe substrate 110 having the lower wiring layer ML-L and the burieddielectric layer 170. The wiring structure MS may include a plurality ofwiring layers ML and a plurality of via plugs MV connected to the wiringlayers ML. The wiring layers ML includes the lower wiring layer ML-L andthe via plugs MV includes the lower via plug MV-L. However, since thelower via plug MV-L and the lower wiring layer ML-L have already beenformed as described with reference to FIGS. 12 and 13 , the wiringstructure MS may be formed by forming the wiring layers ML and the viaplugs MV except for the lower wiring layer ML-L and the lower via plugMV-L after the buried dielectric layer 170 is formed.

The first inter-wiring dielectric layer 210 a may include an insulatingmaterial that has a lower permittivity than the capping dielectric film160 and the buried dielectric layer 170. The first inter-wiringdielectric layer 210 a may include an insulating material that has alower permittivity than silicon oxide. In some embodiments, the firstinter-wiring dielectric layer 210 a may include an ULK film that has anultra-low dielectric constant of about 2.2 to about 2.4. The firstinter-wiring dielectric layer 210 a may be referred to as a low-kdielectric layer. In some embodiments, the level of a top surface of thefirst inter-wiring dielectric layer 210 a may be substantially constant.

In some embodiments, a top surface of the lower wiring layer ML-L thatis at the lowest level among the wiring layers ML may be at the samelevel as a bottom surface of the first inter-wiring dielectric layer 210a.

Referring to FIG. 16 , the second inter-wiring dielectric layer 220, thesub pad via SPV, the sub pad SPD, the third inter-wiring dielectriclayer 230, the protective dielectric layer 240, the fourth inter-wiringdielectric layer 250, the pad via PV, and the pad pattern PD are formedby performing the process described with reference to FIG. 2 .Thereafter, the processes described with reference to FIGS. 3 through 8Aare performed, and a bottom pad 155 connected to the through electrode150 is formed on the bottom surface of the substrate 110 so that asemiconductor chip 2 is formed. For example, the bottom pad 155 mayinclude Ti, Cu, Ni, Au, NiV, NiP, TiNi, TiW, TaN, Al, Pd, CuCr, or acombination thereof.

The semiconductor chip 2 may be different from the semiconductor chip 1of FIG. 8A in that the top surface of the lower wiring layer ML-L at thelowest level among the wiring layers ML is at the same level as thebottom surface of the first inter-wiring dielectric layer 210 a. Inaddition, the semiconductor chip 2 may further include the throughelectrode 150 and the bottom pad 155. Although the through electrode 150passes through the device layer 130 and the substrate 110 in FIG. 16 ,embodiments are not limited thereto. For example, the through electrode150 may be formed to extend from the top surface to the bottom surfaceof the substrate 110 passing through the substrate 110 and may beelectrically connected to the lower wiring layer ML-L through the lowervia plug MV-L or another conductive structure.

The upper cover dielectric layer 290 may cover the side surfaces of thefirst inter-wiring dielectric layer 210 a, the second inter-wiringdielectric layer 220, the third inter-wiring dielectric layer 230, theprotective dielectric layer 240, and the fourth inter-wiring dielectriclayer 250 in an isolation recess SRSb. A bottom surface of the isolationrecess SRSb, which may correspond to the bottom surface of the uppercover dielectric layer 290, may be at the same level as the top surfaceof the buried dielectric layer 170. The upper cover dielectric layer 290may cover the top surface of the buried dielectric layer 170 at thebottom surface of the isolation recess SRSb.

FIG. 17 is a cross-sectional view showing main elements of asemiconductor chip, according to embodiments. Redundant descriptionssimilar to or the same as the ones already given with reference to FIGS.1 through 16 may be omitted. In FIGS. 1 through 17 , like referencenumerals denote like elements.

Referring to FIG. 17 , a semiconductor chip 2 a includes an upper coverdielectric layer 290 filling an isolation recess SRSc. The isolationrecess SRSc may pass through the first inter-wiring dielectric layer 210a and extend into the buried dielectric layer 170. A bottom surface ofthe isolation recess SRSc may be at a lower level than the top surfaceof the buried dielectric layer 170.

The upper cover dielectric layer 290 may cover the side surfaces of thefirst inter-wiring dielectric layer 210 a, the second inter-wiringdielectric layer 220, the third inter-wiring dielectric layer 230, theprotective dielectric layer 240, and the fourth inter-wiring dielectriclayer 250 and at least a portion of a side surface of the burieddielectric layer 170 in the isolation recess SRSc. The bottom surface ofthe upper cover dielectric layer 290 may be at a lower level than thetop surface of the buried dielectric layer 170, and the upper coverdielectric layer 290 may extend into the buried dielectric layer 170.

In some embodiments, the isolation recess SRSc may pass through theburied dielectric layer 170 and the capping dielectric film 160 andextend into the device layer 130. The bottom surface of the isolationrecess SRSc may be at a lower level than the top end of the device layer130. In this case, the upper cover dielectric layer 290 may cover theside surfaces of the buried dielectric layer 170 and the cappingdielectric film 160 and a side surface of an upper portion of the devicelayer 130.

FIGS. 18A and 18B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments. Redundant descriptions similar to or the same as the onesalready given with reference to FIGS. 1 through 16 may be omitted. InFIGS. 1 through 18B, like reference numerals denote like elements.

Referring to FIGS. 18A and 18B, the upper cover dielectric layer 290 ofa semiconductor chip 3 may have a step portion ST in an edge portion ofthe semiconductor chip 3. In some embodiments, the step portion ST ofthe upper cover dielectric layer 290 may be formed in the remainingscribe region RR.

The semiconductor chip 3 may have the step portion ST only in a portionof the edge thereof. The step portion ST may be a portion of the bottomsurface of the recess portion 290R in FIG. 7 , wherein the portionremains after a dicing process is performed to form the semiconductorchip 3. Although the step portion ST extends along two sides among thefour sides of the semiconductor chip 3 but not along the other two sidesin FIG. 18B, embodiments are not limited thereto. For example, the stepportion ST may be arranged not along at least one of the four sides ofthe semiconductor chip 3 but along the other one to three sides.

In a dicing process for obtaining the semiconductor chip 3, sawing usinga blade may be performed along the four sides of the semiconductor chip3. At this time, when the recess portion 290R (in FIG. 7 ) is entirelycut away along at least one side of the semiconductor chip 3 in a sawingprocess using a blade, the step portion ST is not provided at the sideof the semiconductor chip 3 and may extend along the other sidesthereof. The isolation recess SRS may extend along the four sides of thesemiconductor chip 3.

FIGS. 19A and 19B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments. Redundant descriptions similar to or the same as the onesalready given with reference to FIGS. 1 through 16 may be omitted. InFIGS. 1 through 19B, like reference numerals denote like elements.

Referring to FIGS. 19A and 19B, a semiconductor chip 3 a includes theupper cover dielectric layer 290 having a trench portion STR adjacent toan edge of the semiconductor chip 3 a. In some embodiments, the trenchportion STR of the upper cover dielectric layer 290 may be formed in theremaining scribe region RR. The trench portion STR may be arranged in aportion of the upper cover dielectric layer 290, wherein the portion hasa horizontal distance of several μm or less from the edge of thesemiconductor chip 3 a.

The semiconductor chip 3 a may have the trench portion STR in only aportion of the edge. The trench portion STR may be a portion of therecess portion 290R in FIG. 7 , wherein the portion remains after adicing process is performed to form the semiconductor chip 3 a. Althoughthe trench portion STR extends along two sides among the four sides ofthe semiconductor chip 3 a but not along the other two sides in FIG.19B, embodiments are not limited thereto. For example, the trenchportion STR may be arranged not along at least one of the four sides ofthe semiconductor chip 3 a but along the other one to three sides. Insome embodiments, the trench portion STR may extend along some of thefour sides of the semiconductor chip 3 a with a substantially uniformhorizontal width. For example, the trench portion STR may extend alongsome of the four sides of the semiconductor chip 3 a with a horizontalwidth of about 5 μm or less. The isolation recess SRS may extend alongthe four sides of the semiconductor chip 3 a. For example, the trenchportion STR may be formed along one or more among the four sides of thesemiconductor chip 3 a. In certain embodiments, the trench portion STRmay be formed along a portion of a side of the semiconductor chip 3 a.

In a dicing process for obtaining the semiconductor chip 3 a, sawingusing a blade may be performed along the four sides of the semiconductorchip 3 a. At this time, when the recess portion 290R (in FIG. 7 )remains along some of the four sides of the semiconductor chip 3 a andis entirely cut away along the other sides of the semiconductor chip 3 ain a sawing process using a blade, the trench portion STR may extendalong some sides of the semiconductor chip 3 a but not along the othersides thereof.

The step portion ST in FIGS. 8A, 8B, 10, 16, 17, 18A, and 18B and thetrench portion STR in FIGS. 19A and 19B may be collectively referred toas a recess structure.

FIG. 20 is a cross-sectional view of a stage in a method ofmanufacturing a semiconductor chip, according to embodiments. FIG. 21 isa cross-sectional view showing main elements of a semiconductor chip,according to embodiments. FIG. 20 is the cross-sectional view of thestage following the stage of FIG. 5 . Redundant descriptions similar toor the same as the ones already given with reference to FIGS. 1 through8B may be omitted. In FIGS. 1 through 21 , like reference numeralsdenote like elements.

Referring to FIG. 20 , an upper cover dielectric layer 290 a is formedto entirely fill the isolation recess SRS and cover the fourthinter-wiring dielectric layer 250 and the pad pattern PD. The uppercover dielectric layer 290 a may include a single layer including onekind of an insulating layer, a double layer including two kinds ofinsulating layers, or a multiple layer including a combination of atleast three kinds of insulating layers. For example, the upper coverdielectric layer 290 a may include oxide. In some embodiments, the uppercover dielectric layer 290 a may include TEOS. For example, the uppercover dielectric layer 290 a may include oxide, nitride, or acombination thereof. In some embodiments, the upper cover dielectriclayer 290 a may include a HDP oxide layer, a TEOS layer, a siliconnitride layer, or a combination thereof. In some embodiments, the uppercover dielectric layer 290 a may have a multiple layer in which a layerformed of HDP, a layer formed of TEOS, and a layer formed of siliconnitride are sequentially stacked. In some embodiments, the upper coverdielectric layer 290 may have a multiple layer in which a layer formedof TEOS, a layer formed of HDP, and a layer formed of silicon nitrideare sequentially stacked. In some embodiments, the upper coverdielectric layer 290 may have a multiple layer in which a layer formedof HDP, a layer formed of silicon nitride, and a layer formed of TEOSare sequentially stacked. The upper cover dielectric layer 290 a mayinclude a material having a greater permittivity than the firstinter-wiring dielectric layer 210.

The upper cover dielectric layer 290 a may have a flat top surfacehaving a substantially constant level.

Referring to FIG. 21 , an upper portion of the upper cover dielectriclayer 290 a is partially removed. For example, the upper portion of theupper cover dielectric layer 290 a may be partially removed using CMP.Thereafter, a portion of the upper cover dielectric layer 290 a on thepad pattern PD may be removed to expose the chip pad portion CPD of thepad pattern PD. Thereafter, a dicing process is performed to cut thesubstrate 110 along the scribe lane region SR, thereby singulating asemiconductor chip 4.

The semiconductor chip 4 may include the upper cover dielectric layer290 a covering the fourth inter-wiring dielectric layer 250 and aportion of the pad pattern PD. A portion of the pad pattern PD, which isnot covered with the upper cover dielectric layer 290 a, may be the chippad portion CPD, and at least a portion of the pad pattern PD, which iscovered with the upper cover dielectric layer 290, may be aredistribution pattern.

The upper cover dielectric layer 290 a may cover the side surfaces ofthe first inter-wiring dielectric layer 210, the second inter-wiringdielectric layer 220, the third inter-wiring dielectric layer 230, theprotective dielectric layer 240, and the fourth inter-wiring dielectriclayer 250 in the isolation recess SRS. The upper cover dielectric layer290 a may cover the top surface of the device layer 130 at the bottomsurface of the isolation recess SRS.

The upper cover dielectric layer 290 a may have a side surface thatextends along an edge of the semiconductor chip 4 substantially in thevertical direction with respect to the substrate 110, e.g., with respectto the top surface of the substrate 110. The side surface of the uppercover dielectric layer 290 a may extend from the top surface of thedevice layer 130 to at least a level higher than the top surface of thefourth inter-wiring dielectric layer 250 in the vertical direction withrespect to the substrate 110, e.g., with respect to the top surface ofthe substrate 110. For example, the upper cover dielectric layer 290 amay not have the step portion ST shown in FIGS. 8A and 8B.

FIGS. 22 through 24 are cross-sectional views showing main elements ofsemiconductor chips, according to embodiments. Redundant descriptionssimilar to or the same as the ones already given with reference to FIGS.1 through 20 may be omitted. In FIGS. 1 through 24 , like referencenumerals denote like elements.

Referring to FIG. 22 , a semiconductor chip 4 a may include an isolationrecess SRSa, which has a bottom surface at a lower level than a top endof a device layer 130, different from the isolation recess SRS of thesemiconductor chip 4 of FIG. 21 .

Referring to FIG. 23 , a semiconductor chip 5 may include an upper coverdielectric layer 290 a similar to the one of the semiconductor chip 4 ofFIG. 21 different from the upper cover dielectric layer 290 having thestep portion ST in the semiconductor chip 2 of FIG. 16 .

Referring to FIG. 24 , a semiconductor chip 5 a may include an uppercover dielectric layer 290 a similar to the one of the semiconductorchip 4 of FIG. 21 different from the upper cover dielectric layer 290having the step portion ST in the semiconductor chip 2 a of FIG. 17 .

FIGS. 25 and 26 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments. FIG. 27 isa cross-sectional view showing main elements of a semiconductor chip,according to embodiments. FIG. 25 is the cross-sectional view of a stagefollowing the stage of FIG. 3 . Redundant descriptions similar to or thesame as the ones already given with reference to FIGS. 1 through 8B maybe omitted. In FIGS. 1 through 27 , like reference numerals denote likeelements.

Referring to FIG. 25 , the hardmask layer 270 is partially removed toform the opening OP that exposes the fourth inter-wiring dielectriclayer 250 in the scribe lane region SR, as described above withreference to FIG. 4 . Thereafter, the fourth inter-wiring dielectriclayer 250, the protective dielectric layer 240, the third inter-wiringdielectric layer 230, the second inter-wiring dielectric layer 220, andthe first inter-wiring dielectric layer 210 are partially removed usingthe hardmask layer 270 as an etch mask so that an isolation recess SRSdexposing the device layer 130 is formed.

For example, the fourth inter-wiring dielectric layer 250, theprotective dielectric layer 240, the third inter-wiring dielectric layer230, the second inter-wiring dielectric layer 220, and the firstinter-wiring dielectric layer 210 may be partially removed using anashing/etching process. For example, while the isolation recess SRS inFIG. 5 may be formed by separately performing a process of removing thefourth inter-wiring dielectric layer 250, the protective dielectriclayer 240, the third inter-wiring dielectric layer 230, and the secondinter-wiring dielectric layer 220 and a process of removing the firstinter-wiring dielectric layer 210, the isolation recess SRSd in FIG. 25may be formed by performing a single process of removing all of thefourth inter-wiring dielectric layer 250, the protective dielectriclayer 240, the third inter-wiring dielectric layer 230, the secondinter-wiring dielectric layer 220, and the first inter-wiring dielectriclayer 210.

In some embodiments, the side surface of each of the fourth inter-wiringdielectric layer 250, the protective dielectric layer 240, the thirdinter-wiring dielectric layer 230, and the second inter-wiringdielectric layer 220, which is exposed in the isolation recess SRSd, maybe substantially smooth, and the side surface of the first inter-wiringdielectric layer 210 exposed in the isolation recess SRSd may have arugged portion RGN. For example, the rugged portion RGN of the firstinter-wiring dielectric layer 210 may be rougher than the side surfacesof the second inter-wiring dielectric layer 220, the third inter-wiringdielectric layer 230, the protective dielectric layer 220 and the fourthinter-wiring dielectric layer 250.

Referring to FIG. 26 , a sub cover dielectric layer 260 is formed toconformally cover inner and bottom surfaces of the isolation recess SRSdand the top surfaces of the fourth inter-wiring dielectric layer 250 andthe pad pattern PD. For example, the sub cover dielectric layer 260 mayinclude nitride. The sub cover dielectric layer 260 may cover the ruggedportion RGN in the side surface of the first inter-wiring dielectriclayer 210.

Referring to FIG. 27 , the same processes as the ones described withreference to FIGS. 6 through 8B are performed, and a portion of the subcover dielectric layer 260 on the pad pattern PD is also removed when aportion of the upper cover dielectric layer 290 on the pad pattern PD isremoved to expose the chip pad portion CPD of the pad pattern PD,thereby forming a semiconductor chip 6. The sub cover dielectric layer260 and the upper cover dielectric layer 290 may be collectivelyreferred to as a cover dielectric layer.

Unlike the semiconductor chip 1 of FIG. 8A, the semiconductor chip 6 mayfurther include the rugged portion RGN in the side surface of the firstinter-wiring dielectric layer 210 and the sub cover dielectric layer 260covering the inner and bottom surfaces of the isolation recess SRSd, thetop surface of the fourth inter-wiring dielectric layer 250, and aportion of the top surface and the side surface of the pad pattern PD,and the upper cover dielectric layer 290 may be arranged on the subcover dielectric layer 260.

Since the rugged portion RGN in the side surface of the firstinter-wiring dielectric layer 210 is covered with the sub coverdielectric layer 260 and the upper cover dielectric layer 290 in thesemiconductor chip 6, the rugged portion RGN may not cause damages tothe upper cover dielectric layer 290 or chipping of an adhesive film,e.g., an NCF.

FIGS. 28 through 30 are cross-sectional views showing main elements ofsemiconductor chips, according to embodiments. Redundant descriptionssimilar to or the same as the ones already given with reference to FIGS.1 through 27 may be omitted. In FIGS. 1 through 30 , like referencenumerals denote like elements.

Referring to FIG. 28 , unlike the semiconductor chip 1 a of FIG. 10 , asemiconductor chip 6 a may further include the rugged portion RGN in theside surface of the first inter-wiring dielectric layer 210 and the subcover dielectric layer 260 covering inner and bottom surfaces of anisolation recess SRSe, the top surface of the fourth inter-wiringdielectric layer 250, and a portion of the top surface and the sidesurface of the pad pattern PD, and the upper cover dielectric layer 290may be arranged on the sub cover dielectric layer 260. Similarly to theisolation recess SRSa of the semiconductor chip 1 a of FIG. 10 , theisolation recess SRSe may pass through the first inter-wiring dielectriclayer 210 and extend into the device layer 130. The bottom surface ofthe isolation recess SRSe may be at a lower level than the top end ofthe device layer 130.

Referring to FIG. 29 , unlike the semiconductor chip 2 of FIG. 16 , asemiconductor chip 7 may further include the rugged portion RGN in theside surface of the first inter-wiring dielectric layer 210 a and thesub cover dielectric layer 260 covering inner and bottom surfaces of anisolation recess SRSf, the top surface of the fourth inter-wiringdielectric layer 250, and a portion of the top surface and the sidesurface of the pad pattern PD, and the upper cover dielectric layer 290may be arranged on the sub cover dielectric layer 260. Similarly to theisolation recess SRSb of the semiconductor chip 2 of FIG. 16 , a bottomsurface of the isolation recess SRSf of the semiconductor chip 7 may beat the same level as the top surface of the buried dielectric layer 170.For example, the bottom surface of the isolation recess SRSf of thesemiconductor chip 7 may correspond to the top surface of the burieddielectric layer 170 in the isolation recess SRSf.

Referring to FIG. 30 , unlike the semiconductor chip 2 a of FIG. 17 , asemiconductor chip 7 a may further include the rugged portion RGN in theside surface of the first inter-wiring dielectric layer 210 a and thesub cover dielectric layer 260 covering inner and bottom surfaces of anisolation recess SRSg, the top surface of the fourth inter-wiringdielectric layer 250, and a portion of the top surface and the sidesurface of the pad pattern PD, and the upper cover dielectric layer 290may be arranged on the sub cover dielectric layer 260. Similarly to theisolation recess SRSc of the semiconductor chip 2 a of FIG. 17 , abottom surface of the isolation recess SRSg of the semiconductor chip 7may be at a lower level than the top surface of the buried dielectriclayer 170.

FIGS. 31A and 31B are respectively a cross-sectional view and a planview that show main elements of a semiconductor chip, according toembodiments. Redundant descriptions similar to or the same as the onesalready given with reference to FIGS. 1 through 30 may be omitted. InFIGS. 1 through 31B, like reference numerals denote like elements.

Referring to FIGS. 31A and 31B, a semiconductor chip 8 may include anupper cover dielectric layer 295 different from the upper coverdielectric layer 290 included in the semiconductor chip 6 of FIG. 27 .The upper cover dielectric layer 295 may not fill the isolation recessSRSd and may be arranged only on a portion of the sub cover dielectriclayer 260, wherein the portion of the sub cover dielectric layer 260covers the top surface of the fourth inter-wiring dielectric layer 250and the side surface and a portion of the top surface of the pad patternPD. For example, the upper cover dielectric layer 295 may includephotosensitive polyimide (PSPI).

The isolation recess SRSd may extend along four sides of thesemiconductor chip 8.

Since the rugged portion RGN in the side surface of the firstinter-wiring dielectric layer 210 is covered with the sub coverdielectric layer 260 in the semiconductor chip 8, chipping of anadhesive film, e.g., an NCF, may not be caused by the rugged portion RGNof the first inter-wiring dielectric layer 210.

FIGS. 32 through 34 are cross-sectional views showing main elements ofsemiconductor chips, according to embodiments. Redundant descriptionssimilar to or the same as the ones already given with reference to FIGS.1 through 31B may be omitted. In FIGS. 1 through 34 , like referencenumerals denote like elements.

Referring to FIG. 32 , a semiconductor chip 8 a may include an uppercover dielectric layer 295 different from the upper cover dielectriclayer 290 included in the semiconductor chip 6 a of FIG. 28 . The uppercover dielectric layer 295 may not fill the isolation recess SRSe andmay be arranged only on a portion of the sub cover dielectric layer 260,wherein the portion of the sub cover dielectric layer 260 covers the topsurface of the fourth inter-wiring dielectric layer 250 and the sidesurface and a portion of the top surface of the pad pattern PD.

Referring to FIG. 33 , a semiconductor chip 9 may include an upper coverdielectric layer 295 different from the upper cover dielectric layer 290included in the semiconductor chip 7 of FIG. 29 . The upper coverdielectric layer 295 may not fill the isolation recess SRSf and may bearranged only on a portion of the sub cover dielectric layer 260,wherein the portion of the sub cover dielectric layer 260 covers the topsurface of the fourth inter-wiring dielectric layer 250 and the sidesurface and a portion of the top surface of the pad pattern PD.

Referring to FIG. 34 , a semiconductor chip 9 a may include an uppercover dielectric layer 295 different from the upper cover dielectriclayer 290 included in the semiconductor chip 7 a of FIG. 30 . The uppercover dielectric layer 295 may not fill the isolation recess SRSg andmay be arranged only on a portion of the sub cover dielectric layer 260,wherein the portion of the sub cover dielectric layer 260 covers the topsurface of the fourth inter-wiring dielectric layer 250 and the sidesurface and a portion of the top surface of the pad pattern PD.

FIGS. 35 and 36 are cross-sectional views of stages in a method ofmanufacturing a semiconductor chip, according to embodiments. FIGS. 37Aand 37B are respectively a cross-sectional view and a plan view thatshow main elements of a semiconductor chip, according to embodiments.FIG. 35 is the cross-sectional view of a stage following the stage ofFIG. 5 . Redundant descriptions similar to or the same as the onesalready given with reference to FIGS. 1 through 8B may be omitted. InFIGS. 1 through 37B, like reference numerals denote like elements.

Referring to FIG. 35 , similarly to the upper cover dielectric layer 290in FIGS. 6 and 7 , an upper cover dielectric layer 290 is formed to fillat least a portion of the isolation recess SRS and to cover a fourthinter-wiring dielectric layer 250 and a pad pattern PD, and an upperportion of the upper cover dielectric layer 290 is partially removed.The level of the top surface of the upper cover dielectric layer 290 issubstantially constant in the device region DR. The upper coverdielectric layer 290 may include a recess portion 290Ra corresponding tothe isolation recess SRS.

In some embodiments, a bottom surface of the recess portion 290Ra may beat a higher level than the top surface of the fourth inter-wiringdielectric layer 250. In some embodiments, the bottom surface of therecess portion 290Ra may be at a lower level than the top surface of thepad pattern PD.

Referring to FIG. 36 , an extended recess portion 292R is formed byremoving a portion of the upper cover dielectric layer 290 adjacent tothe recess portion 290Ra. The extended recess portion 292R may be formedby removing a portion of the upper cover dielectric layer 290 adjacentto the recess portion 290Ra using a photolithography process or anetching process. The extended recess portion 292R may be formed tocommunicate with/to be open to the recess portion 290Ra. Although therecess portion 290Ra and the extended recess portion 292R are separatelyformed and thus individually named, the recess portion 290Ra may beconsidered as being extended to the extended recess portion 292R inlight of the result of forming the extended recess portion 292R.Therefore, the recess portion 290Ra and the extended recess portion 292Rmay be collectively referred to as a recess portion.

Although a bottom surface of the extended recess portion 292R is at ahigher level than the bottom surface of the recess portion 290Ra in FIG.36 , embodiments are not limited thereto. For example, the bottomsurface of the extended recess portion 292R may be at the same level asor a lower level than the bottom surface of the recess portion 290Ra.

In a process of removing a portion of the upper cover dielectric layer290 to form the extended recess portion 292R, a portion of the uppercover dielectric layer 290 between the recess portion 290Ra and theextended recess portion 292R, that is, a portion of the upper coverdielectric layer 290 in which the recess portion 290Ra overlaps theextended recess portion 292R, is further removed so that a grooveportion SLP may be formed between the recess portion 290Ra and theextended recess portion 292R. A bottom end of the groove portion SLP maybe at a lower level than the bottom surface of the recess portion 290Raand the bottom surface of the extended recess portion 292R. For example,the groove portion SLP may include a groove which is an extending narrowchannel formed on a surface of the upper cover dielectric layer 290between the extended recess portion 292R and the recession portion290Ra. In certain embodiments, the groove portion SLP may refer to thegroove itself.

Referring to FIGS. 36 through 37B, a portion of the upper coverdielectric layer 290 on the pad pattern PD may be removed to expose thechip pad portion CPD of the pad pattern PD.

Thereafter, a dicing process is performed to cut the substrate 110 alongthe scribe lane region SR, thereby singulating a semiconductor chip 10.

Unlike the semiconductor chip 1 of FIG. 8A, the semiconductor chip 10includes the upper cover dielectric layer 290 having a step portion STaacross the remaining scribe region RR and a portion of the device regionDR adjacent to the remaining scribe region RR. In some embodiments, thestep portion STa may extend along four sides of the semiconductor chip10 with a substantially uniform horizontal width. For example, the stepportion STa may extend along the four sides of the semiconductor chip 10with a horizontal width of about 10 μm or less.

The step portion STa may be at a higher level than the top surface ofthe fourth inter-wiring dielectric layer 250. The step portion STa maybe at a lower level than the top surface of the chip pad portion CPD.

The step portion STa may have the groove portion SLP in the bottomsurface thereof. The groove portion SLP may surround the device regionDR along an edge of the semiconductor chip 10. For example, when thesemiconductor chip 10 has four sides which form a rectangular shape in aplan view, the groove portion SLP may be arranged to surround the deviceregion DR along the four sides of the semiconductor chip 10.

FIG. 38 is a cross-sectional view of a stage in a method ofmanufacturing a semiconductor chip, according to embodiments. FIGS. 39Aand 39B are respectively a cross-sectional view and a plan view thatshow main elements of a semiconductor chip, according to embodiments.FIG. 38 is the cross-sectional view of the stage following the stage ofFIG. 35 . Redundant descriptions similar to or the same as the onesalready given with reference to FIGS. 1 through 37B may be omitted. InFIGS. 1 through 39B, like reference numerals denote like elements.

Referring to FIG. 38 , an extended recess portion 292Ra is formed byremoving a portion of the upper cover dielectric layer 290 adjacent tothe recess portion 290Ra. The extended recess portion 292Ra may beformed by removing a portion of the upper cover dielectric layer 290adjacent to the recess portion 290Ra using a photolithography process oran etching process. The extended recess portion 292Ra may be formed tocommunicate with/to be open to the recess portion 290Ra. Although therecess portion 290Ra and the extended recess portion 292Ra areseparately formed and thus individually named, the recess portion 290Ramay be considered as being extended to the extended recess portion 292Rain light of the result of forming the extended recess portion 292Ra.Therefore, the recess portion 290Ra and the extended recess portion292Ra may be collectively referred to as a recess portion.

Although a bottom surface of the extended recess portion 292Ra is at ahigher level than the bottom surface of the recess portion 290Ra in FIG.38 , embodiments are not limited thereto. For example, the bottomsurface of the extended recess portion 292Ra may be at the same level asor a lower level than the bottom surface of the recess portion 290Ra.

In a process of removing a portion of the upper cover dielectric layer290 to form the extended recess portion 292Ra, a portion of the uppercover dielectric layer 290 between the recess portion 290Ra and theextended recess portion 292Ra may be less removed so that a protrusionportion PRP may be formed between the recess portion 290Ra and theextended recess portion 292Ra. A top end of the protrusion portion PRPmay be at a higher level than the bottom surface of the recess portion290Ra and the bottom surface of the extended recess portion 292Ra. Forexample, the protrusion portion PRP may include a protrusion which isextending along and between the recess portion 290Ra and the extendedrecess portion 292Ra on a surface of the upper cover dielectric layer290. In certain embodiments, the protrusion portion SLP may refer to theprotrusion itself.

Referring to FIGS. 38 through 39B, a portion of the upper coverdielectric layer 290 on the pad pattern PD may be removed to expose thechip pad portion CPD of the pad pattern PD.

Thereafter, a dicing process is performed to cut the substrate 110 alongthe scribe lane region SR, thereby singulating a semiconductor chip 10a.

Unlike the semiconductor chip 10 of FIG. 37A, the semiconductor chip 10a includes the upper cover dielectric layer 290 having a step portionSTb across the remaining scribe region RR and a portion of the deviceregion DR adjacent to the remaining scribe region RR. In someembodiments, the step portion STb may extend along four sides of thesemiconductor chip 10 a with a substantially uniform horizontal width.For example, the step portion STb may extend along the four sides of thesemiconductor chip 10 a with a horizontal width of about 10 μm or less.

The step portion STb may be at a higher level than the top surface ofthe fourth inter-wiring dielectric layer 250. The step portion STb maybe at a lower level than the top surface of the chip pad portion CPD.

The step portion STb may have the protrusion portion PRP on the bottomsurface thereof. The protrusion portion PRP may surround the deviceregion DR along an edge of the semiconductor chip 10 a. For example,when the semiconductor chip 10 a has four sides which form a rectangularshape in a plan view, the protrusion portion PRP may be arranged tosurround the device region DR along the four sides of the semiconductorchip 10 a.

Although not shown, similarly to the semiconductor chip 3 of FIGS. 18Aand 18B, the semiconductor chip 10 of FIGS. 37A and 37B and thesemiconductor chip 10 a of FIGS. 39A and 39B may respectively have thestep portions STa and STb of which each is arranged not along at leastone of the four sides of the semiconductor chip 10 or 10 a but along theother one to three sides. Similarly to the semiconductor chip 3 a ofFIGS. 19A and 19B, the semiconductor chip 10 of FIGS. 37A and 37B andthe semiconductor chip 10 a of FIGS. 39A and 39B may have the trenchportion STR, which is arranged not along at least one of the four sidesof the semiconductor chip 10 or 10 a but along the other one to threesides, instead of the step portion STa or STb.

In some embodiments, the groove portion SLP of the semiconductor chip 10of FIGS. 37A and 37B or the protrusion portion PRP of the semiconductorchip 10 a of FIGS. 39A and 39B may be arranged not along at least one ofthe four sides of the semiconductor chip 10 or 10 a but along the otherone to three sides. In certain embodiments, the step portion in whichbottom surface the groove or the protrusion is formed is at a levelhigher than a top surface of the lower inter-wiring dielectric layer andlower than a top surface of the upper inter-wiring dielectric layer.

While the inventive concept has been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. A semiconductor chip comprising: a device layeron a substrate, the device layer including a plurality of semiconductordevices; a wiring structure and a lower inter-wiring dielectric layereach on the device layer, the lower inter-wiring dielectric layersurrounding the wiring structure and having a lower permittivity thansilicon oxide; an upper inter-wiring dielectric layer on the lowerinter-wiring dielectric layer, the upper inter-wiring dielectric layerhaving a permittivity that is equal to or higher than a permittivity ofsilicon oxide; an isolation recess along an edge of the substrate, theisolation recess formed on a side surface of the lower inter-wiringdielectric layer and a side surface of the upper inter-wiring dielectriclayer, the isolation recess having a bottom surface at a level that isequal to or lower than a level of a bottom surface of the lowerinter-wiring dielectric layer; and a cover dielectric layer covering theside surfaces of the lower inter-wiring dielectric layer and the upperinter-wiring dielectric layer and the bottom surface of the isolationrecess, wherein the substrate has four sides which form a rectangularshape in a plan view, wherein the cover dielectric layer has a stepportion along at least one of the four sides of the substrate, andwherein a groove or a protrusion is formed in a bottom surface of thestep portion, along at least the one of the four sides of the substrate.2. The semiconductor chip of claim 1, wherein the step portion of thecover dielectric layer extends along the four sides of the substrate. 3.The semiconductor chip of claim 1, wherein the step portion of the coverdielectric layer is at a higher level than a top surface of the lowerinter-wiring dielectric layer and at a lower level than a top surface ofthe upper inter-wiring dielectric layer.
 4. The semiconductor chip ofclaim 1, wherein the step portion of the cover dielectric layer is at ahigher level than a top surface of the upper inter-wiring dielectriclayer.
 5. The semiconductor chip of claim 1, wherein the coverdielectric layer has a trench along some of the four sides of thesubstrate.
 6. The semiconductor chip of claim 1, wherein, the coverdielectric layer includes a sub cover dielectric layer covering the sidesurface of the lower inter-wiring dielectric layer and conformallycovering a top surface of the upper inter-wiring dielectric layer andinner and bottom surfaces of the isolation recess.
 7. The semiconductorchip of claim 6, wherein the cover dielectric layer further includes anupper cover dielectric layer filling the isolation recess and coveringthe sub cover dielectric layer.
 8. The semiconductor chip of claim 6,wherein the cover dielectric layer further includes an upper coverdielectric layer covering a portion of the sub cover dielectric layer onthe top surface of the upper inter-wiring dielectric layer, the uppercover dielectric layer having a multiple layer in which a layer formedof high-density plasma (HDP), a layer formed of tetraethyl orthosilicate(TEOS), and a layer formed of silicon nitride are sequentially stacked.9. The semiconductor chip of claim 1, wherein the wiring structureincludes a plurality of wiring layers including a lower wiring layer atthe lowest level among the plurality of wiring layers, and a bottomsurface of the lower wiring layer is at the same level as the bottomsurface of the lower inter-wiring dielectric layer.
 10. Thesemiconductor chip of claim 1, wherein the wiring structure includes aplurality of wiring layers including a lower wiring layer at the lowestlevel among the plurality of wiring layers, and a top surface of thelower wiring layer is at the same level as the bottom surface of thelower inter-wiring dielectric layer.
 11. The semiconductor chip of claim10, further comprising: a bottom pad on a bottom surface of thesubstrate; and a through electrode passing through the device layer andthe substrate and electrically connecting the lower wiring layer to thebottom pad.
 12. A semiconductor chip comprising: a device layer on asubstrate, the device layer including a plurality of semiconductordevices; a wiring structure and a lower inter-wiring dielectric layereach on the device layer, the lower inter-wiring dielectric layersurrounding the wiring structure; an upper inter-wiring dielectric layeron the lower inter-wiring dielectric layer; an isolation recess arrangedalong the entirety of an edge of the substrate and extending from a topsurface of the upper inter-wiring dielectric layer at least to the samelevel as a bottom surface of the lower inter-wiring dielectric layer; acover dielectric layer filling the isolation recess, covering at least aportion of the top surface of the upper inter-wiring dielectric layer,and having a step portion along at least a portion of the edge of thesubstrate; and a groove or a protrusion in a bottom surface of the stepportion, wherein the cover dielectric layer includes a sub coverdielectric layer conformally covering a side surface of the lowerinter-wiring dielectric layer, a top surface of the upper inter-wiringdielectric layer, and inner and bottom surfaces of the isolation recess.13. The semiconductor chip of claim 12, wherein the isolation recessfurther extends below the level of the bottom surface of the lowerinter-wiring dielectric layer into the device layer.
 14. Thesemiconductor chip of claim 12, wherein the lower inter-wiringdielectric layer is a low-k dielectric layer having a lower permittivitythan silicon oxide, and a permittivity of the upper inter-wiringdielectric layer is greater than a permittivity of the lowerinter-wiring dielectric layer.
 15. The semiconductor chip of claim 12,wherein the step portion of the cover dielectric layer is at a higherlevel than a top surface of the lower inter-wiring dielectric layer. 16.A semiconductor chip comprising: a device layer on a substrate that hasfour sides which form a rectangular shape in a plan view, the devicelayer including a plurality of semiconductor devices; a wiring structureand a lower inter-wiring dielectric layer each on the device layer, thelower inter-wiring dielectric layer surrounding the wiring structure; anupper inter-wiring dielectric layer on the lower inter-wiring dielectriclayer; an isolation recess arranged along the entirety of an edge of thesubstrate and extending from a top surface of the upper inter-wiringdielectric layer at least to the same level as a bottom surface of thelower inter-wiring dielectric layer; a pad pattern on the upperinter-wiring dielectric layer and a pad via passing through the upperinter-wiring dielectric layer, the pad via electrically connecting thepad pattern to the wiring structure; an upper cover dielectric layerfilling the isolation recess, covering at least a portion of the topsurface of the upper inter-wiring dielectric layer, and having a stepportion along at least one of the four sides of the substrate at a levelthat is higher than a top surface of the lower inter-wiring dielectriclayer; and a groove or a protrusion in a bottom surface of the stepportion, along at least one of the four sides of the substrate.
 17. Thesemiconductor chip of claim 16, wherein the step portion of the uppercover dielectric layer extends along the four sides of the substrate.18. The semiconductor chip of claim 16, wherein the isolation recessextends along the four sides of the substrate.